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EUROCVD-15, September 4 - 9, 2005, Bochum - Germany
Scientific Programme..........Invited speakers


The scientific programme of EUROCVD-15 consists of invited and keynote lectures as well as contributed papers, either oral or poster presentation.

General Information
The programme is arranged according to the abstracts/manuscripts accepted by the Local Organising Committee on previous approval of the National and International Advisory Boards.
Information for Oral Presentation and Technical Equipment:

Language
English will be the official language of the conference. There will be no simultaneous translation.

Late News Abstract
Additional poster presentations will be considered as Late News Abstracts. A copy of the abstract should be submitted to the EUROCVD organising committee through eurocvd@rub.de not later than 1st August 2005.

One page abstracts can be submitted and should include the title of the paper and the full names of the authors with affiliation and contact information. Authors of accepted Late News Abstracts will be notified not later than August 15, 2005. The authors of Late News Abstracts which have been accepted for the conference will have the opportunity to present their posters during the conference.

Important Note: The accepted Late News Abstracts will not be published in the bound proceedings volume (ECS) of the conference.

Scientific programme: Poster Session I : Poster Session II :

The scientific programme of EUROCVD-15 consists of invited and keynote lectures as well as contributed papers, either oral or poster presentation.

Invited Lectures: The author is allowed 30 minutes for presentation and 5 minutes for discussion

Keynote Lectures: The author is allowed 25 minutes for presentation and 5 minutes for discussion

Oral Presentation: The author is allowed 15 minutes for presentation and 5 minutes for discussion

Poster Presentation: Posters will form an important part of the conference. Monday and Wednesday evening has been set aside for formal viewing and discussion of posters.
The scientific presentation of the poster must follow these rules:

- The useful space for the poster is 85 cm wide and 115 cm high
- The title, authors name, affiliation and address must have a size of lettering which must be legible at a distance of 2 meters. The board will have your poster code number in the upper right corner which can be found in the final programme.
- The authors are asked to be present at their poster at the hours indicated on the timetable.

The programme is divided into the following topics:

FSM Fundamentals, Simulations and Modelling ALD Atomic Layer Deposition
SPM Special Techniques, Precursors and Materials MMS Metals, Metal electrodes and Semiconductors
CCC Carbon, Carbon nanotubes, Carbon structures MOD Metal Oxides and Dielectrics
PEC Plasma Enhanced CVD CHM Coatings and Hard Materials
N&N Nanoparticles and Nanocomposites

CONFERENCE SCHEDULE

.. Monday
05.09.2005
Tuesday
06.09.2005
Wednesday
07.09.2005
Thursday
08.09.2005
Friday
09.09.2005
8:45-9:00 Opening Ceremony .. .. .. ..
9.00-13:00 FSM-I CCC N&N-II and PEC ALD-II and MMS MOD and CHM
Closing Ceremony
13:00- 14:15 Lunch Lunch Lunch Lunch Lunch
14:15- 18:00 FSM-II and
SPM
EUROCVD
Excursion
ALD and N&N-I MOD-I and MOD-II

..EUROCVD
Board Meeting

18:00-19:30 Poster Session .. Poster Session Conference Dinner ..


INVITED SPEAKERS

ACADEMIA:
D. Barreca
Advances in synthetic strategies for metal oxide systems: A non-conventional hybrid CVD/Sol-gel Approach Molecular Sciences and Technology Institute-CNR-Padova, Padova, Italy
S. George Atomic layer deposition on polymers Department of chemistry and biochemistry , University of Colorado Boulder, USA
A. Goosens Nanocomposites between TiO2 and CuInSe2: Towards solid state 3D solar cells Laboratory of Inorganic Chemistry University of Delft, Delft, The Netherlands
F. J. Gordillo-Vazquez Plasma Chemistry in the CVD synthesis of nanodiamond films Instituto de Optica, CSIC, Madrid, Sapain
R. G. Gordon Atomic layer deposition using precursors having metals coordinated by nitrogen Department of chemistry and chemical biology Harvard university Cambridge, MA, USA
R. F. Hicks Atmosheric pressure plasma enhanced chemical vapour deposition of thin films Department of Chemical Engineering, University of California Los Angeles, CA, USA
Ph. Kalck Controlled preparation of supported catalysts by low-temperature chemical vapour deposition methods Laoratoire de Catalyse et Polymers, ENSIACET, Toulouse, France
G. Kasper Generation and characterisation of composite Pd/SiO2 catalysts by CVD/CVD in a continuous gas-phase/Aerosol Process Institute für Mechanische Verfahrenstechnik und Mechanik
University of Karlsruhe, Karlsruhe, Germany
Y. Kim Aminoalkoxide groups as monovalent bidentate ligands for the precursors to various metals and metal oxides and the application of the precursors in MOCVD and ALD Thin film materials laboratory, Korea research institute of chemical technology, Daejeon, Korea
F. Langlais Multiple experimental investigation for understanding CVD mechanism: Example of laminar polycarbon deposition Laboratoire des Composites Thermostructuraux, Universite' Bordeaux 1, Pessac, France
Y.- H. Lee High yield catalytic synthesis of thin multiwalled carbon nanotubes and their field emission characteristics Department of Physics, Center for Nanotubes and Nanostructured Composites, Suwon, Republic of Korea
M. Leskelä, Atomic layer deposition of metal thin films Department of chemistry, University of Helsinki, Finland
M. Pons Numerical simulation of SiC processes: A characterisation tool for the design of epitaxial structures in electronics INPGrenoble-CNRS, SaintMartin d'Heres Cedex, France
R. van de Sanden The growth of thin amorphous films from reactive gas phase species: In-situ studies to unravel the growth mechanism Department of Applied Physics Eindhoven University of Technology, Eindhoven, The Netherlands
M.M. Sung Selective atomic layer deposition of titanium oxide on silicon and gold with patterned self-assembled monolayers Department of chemistry, Kookmin University, Seoul, Korea
M. L. Terranova Growth of nano-sized carbon structures with predefinite architectures Dip. Scienze e tecnologie chimiche, Un. Tor Vergata, Via della Ricerca Scientifica, Roma, Italy
C. Winter Atomic layer deposition of tungsten carbonitride thin films from a new metalorganic precursor Department of Chemistry Wayne State University Detroit, MI, USA, USA

 

COMPANIES:

M. Caymax Si, SIGe and Ge: High carrier mobility technology through selective and non-selective epitaxial deposition IMEC, Belgium
P.-O. Hansson Low temperature Epi for fabrication of Recessed Source/Drain Applied Materials, USA
J. Irven Precursor chemistries for electronics, optics, and opto-electronics Air products, UK
J. W. Maes Atomic layer deposition of dielectric and metal films for semiconductor device applications ASM, Leuven, Belgium
M. Vogt PECVD carbon as a new material for advanced DRAM production Infineon Technologies, Dresden, Germany